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Interaction-Induced Shubnikov–de Haas Oscillations in Optical Conductivity of Monolayer MoSe2

2018/12/20 by T. Smoleński, Ovidiu Cotleţ, O. Cotlet +17 · 82 citations
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Computer science #Graphene research and applications #Materials science #Molecular Junctions and Nanostructures #Monolayer #Nanotechnology #Physics #cond-mat.mes-hall

paper · pdf · open access · doi:10.1103/physrevlett.123.097403

published in Physical Review Letters 123(9), 097403 (American Physical Society) · Main text: 5 pages, 5 figures; Supplemental Material: 13 pages, 6 figures

arxiv created 2018/12/20 · openalex created_date 2018/12/22 · openalex publication_date 2019/08/30 · arxiv updated 2019/09/02 · openalex updated_date 2026/08/05

Abstract

We report polarization-resolved resonant reflection spectroscopy of a charge-tunable atomically thin valley semiconductor hosting tightly bound excitons coupled to a dilute system of fully spin- and valley-polarized holes in the presence of a strong magnetic field. We find that exciton-hole interactions manifest themselves in hole-density dependent, Shubnikov-de Haas-like oscillations in the energy and line broadening of the excitonic resonances. These oscillations are evidenced to be precisely correlated with the occupation of Landau levels, thus demonstrating that strong interactions between the excitons and Landau-quantized itinerant carriers enable optical investigation of quantum-Hall physics in transition metal dichalcogenides.

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