Strain-Induced Room-Temperature Ferromagnetic Semiconductors with Large Anomalous Hall Conductivity in Two-Dimensional Cr2Ge2Se6

2019/01/31 by Xue-Juan Dong, Jing-Yang You, Bo Gu +1 · 1 citation
Physics and Astronomy · #cond-mat.mtrl-sci #cond-mat.str-el

paper · pdf · doi:10.1103/physrevapplied.12.014020

published as Phys. Rev. Applied 12, 014020 (2019) · 5 pages, 5 figures

arxiv created 2019/07/16 · arxiv updated 2019/07/17

Abstract

By density functional theory calculations, we predict a stable two-dimensional (2D) ferromagnetic semiconductor Cr₂Ge₂Se₆, where the Curie temperature T_c can be dramatically enhanced beyond room temperature by applying a few percent strain. In addition, the anomalous Hall conductivity in 2D Cr₂Ge₂Se₆ and Cr₂Ge₂Te₆ is predicted to be comparable to that in ferromagnetic metals of Fe and Ni, and is an order of magnitude larger than that in diluted magnetic semiconductor Ga(Mn,As). Based on superexchange interactions, the enhanced T_c in 2D Cr₂Ge₂Se₆ by strain can be understood by the decreased energy difference between 3d orbitals of Cr and 4p orbitals of Se. Our finding highlights the microscopic mechanism to obtain the room temperature ferromagnetic semiconductors by strain.

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