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Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

2018/11/30 by A. Crippa, R. Ezzouch, A. Aprá +10 · 1 citation
Physics and Astronomy · #cond-mat.mes-hall

paper · pdf · doi:10.1038/s41467-019-10848-z

published as Nature Communications 10, 2776 (2019)

arxiv created 2019/07/02 · arxiv updated 2019/07/09

Abstract

Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1 K.

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