2013/12/13 by Davide Spirito, Dominique Coquillat, Sergio L. De Bonis +9 · 6 citations
Engineering · Physics and Astronomy · #Bilayer graphene #Broadband #Detector #Field-effect transistor #Graphene #Materials science #Nanotechnology #Noise-equivalent power #Optics #Optoelectronics #Photocurrent #Photodetector #Physics #Responsivity #Superconducting and THz Device Technology #Terahertz radiation #Terahertz technology and applications #Topological Materials and Phenomena #Transistor #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.4864082
published as Applied Physics Letters, 104, 061111 (2014) · 8 pages, 5 figures. Submitted to Applied Physics Letters
arxiv created 2013/12/13 · openalex publication_date 2014/02/10 · arxiv updated 2019/04/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06
We report bilayer-graphene field effect transistors operating as Terahertz (THz) broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity ∼1.2 V/W (1.3 mA/W) and a noise equivalent power ∼2 × 10−9 W/√Hz in the 0.29–0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.