Anomalous propagation of luminescence through bulk n-InP

2010/11/09 by Serge Luryi, Luryi, Serge, Oleg G. Semyonov +6
Energy · Engineering · Physics and Astronomy · #Advanced Energy Technologies and Civil Engineering Innovations #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Optics (physics.optics) #Radiation Detection and Scintillator Technologies #physics.optics

paper · pdf · doi:10.48550/arxiv.1011.2132

2 pages, 2 figures, Frontiers in Optics, JTuA33, Rochester, NY, September 24-28, 2010

arxiv created 2010/11/09 · openalex publication_date 2010/11/09 · arxiv updated 2010/11/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Implementation of a semiconductor as a scintillator with a lattice-matched surface photo-diode for radiation detection requires efficient luminescence collection. Low and heavily doped bulk n-InP has been studied to optimize luminescence transmission via photon recycling.

Related

• Levy Flight of Holes in InP Semiconductor Scintillator
• Levy Flight of Photoexcited Minority Carriers in Moderately Doped Semiconductors: Theory and Observation
• Photon counting from the vacuum ultraviolet to the short wavelength infrared using semiconductor and superconducting technologies
• A high-performance custom photodetection system to probe the light yield enhancement in oriented crystals
• High-dynamic-range transmission-mode detection of synchrotron radiation\n using X-ray excited optical luminescence in diamond