Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

2018/03/06 by Yujun Deng, Yijun Yu, Yichen Song +12 · 2,617 citations
Chemistry · Materials Science · Physics and Astronomy · #2D Materials and Applications #Chemistry #Condensed matter physics #Curie temperature #Ferromagnetism #Graphene research and applications #Ion #Ionic bonding #Magnetic anisotropy #Magnetic field #Magnetization #Magnetocrystalline anisotropy #Materials science #Monolayer #Nanotechnology #Physics #Spintronics #Thin film #Topological Materials and Phenomena #cond-mat.mtrl-sci #van der Waals force

paper · pdf · doi:10.1038/s41586-018-0626-9

published in Nature 563(7729), 94-99 (Nature Portfolio)

arxiv created 2018/03/06 · openalex created_date 2018/03/29 · openalex publication_date 2018/10/19 · arxiv updated 2018/11/21 · openalex updated_date 2026/08/05

Abstract

Material research has been a major driving force in the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices; identifying new magnetic materials is key to better device performance and new device paradigm. The advent of two-dimensional van der Waals crystals creates new possibilities. This family of materials retain their chemical stability and structural integrity down to monolayers and, being atomically thin, are readily tuned by various kinds of gate modulation. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr₂Ge₂Te₆ and CrI₃ at low temperatures. Here, we developed a new device fabrication technique, and successfully isolated monolayers from layered metallic magnet Fe₃GeTe₂ for magnetotransport study. We found that the itinerant ferromagnetism persists in Fe₃GeTe₂ down to monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, T_c, is suppressed in pristine Fe₃GeTe₂ thin flakes. An ionic gate, however, dramatically raises the T_c up to room temperature, significantly higher than the bulk T_c of 205 Kelvin. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe₃GeTe₂ opens up opportunities for potential voltage-controlled magnetoelectronics based on atomically thin van der Waals crystals.

Citations

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Cited by

• Symmetry-engineered and electrically tunable in-plane anomalous Hall effect in oxide heterostructures
• Highly Efficient Spin–Orbit Torque and Switching of Layered Ferromagnet Fe3GeTe2
• Magnetic structure and exchange interactions in the layered semiconductor CrPS4
• Magnetic Proximity Effect in a van der Waals Moiré Superlattice
• Magnon Transport in Quasi-Two-Dimensional van der Waals Antiferromagnets
• Defect-induced 4p-magnetism in layered platinum diselenide
• Ab initio study of anisotropic effects in two-dimensional Fe₃GeTe₂ using \bfk-dependent Green's functions
• Gate-tunable spin waves in antiferromagnetic atomic bilayers
• Anatomy of Spin--Orbit Torques in Monolayer Fe₃GeTe₂ and Fe₃GaTe₂: Insights from atomistic and momentum-space decompositions
• Hund's physics and the magnetic ground state ofCrOX(X=Cl,<mml:mspace width="0.16em"/>Br)