2018/07/09 by X. L. Sun, T. Tolba, G. F. Cao +149 · 1 citation
Physics and Astronomy · #physics.ins-det
paper · pdf · doi:10.1088/1748-0221/13/09/t09006
16 pages, 12 figures, 2 tables and two conferences (INPC2016 and TIPP2017)
arxiv created 2018/07/09 · arxiv updated 2018/10/17
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No observable physical damage to the bulk or surface of the devices was caused by the exposure.