2013/10/09 by Yung‐Chang Lin, Lin, Yung-Chang, Dumitru Dumcenco +5
Materials Science · #2D Materials and Applications #FOS: Physical sciences #Graphene research and applications #MXene and MAX Phase Materials #Materials Science (cond-mat.mtrl-sci)
paper · pdf · doi:10.48550/arxiv.1310.2363
openalex publication_date 2013/10/09 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Structural transformation between metallic (1T) and semiconducting (2H) phases of single-layered MoS2 was systematically investigated by an in situ STEM with atomic precision. The 1T/2H phase transition is comprised of S and/or Mo atomic-plane glides, and requires an intermediate phase (α-phase) as an indispensable precursor. Migration of two kinds of boundaries (β and γ-boundaries) is also found to be responsible for the growth of the second phase. The 1T phase can be intentionally introduced in the 2H matrix by using a high dose of incident electron beam during heating the MoS2 single-layers up to 400~700°C in high vacuum and indeed controllable in size. This work may lead to the possible fabrication of composite nano-devices made of local domains with distinct electronic properties.