2013/07/09 by T. A. Komissarova, A. N. Semenov, Komissarova, T. A. +18
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #Surface and Thin Film Phenomena #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1307.2368
10 pages, 4 figures
arxiv created 2013/07/09 · openalex publication_date 2013/07/09 · arxiv updated 2013/07/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report on study of electrical and structural properties of InSb/GaAs(001) heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong anisotropy of electron transport parameters measured at a low magnetic field has been found, whereas the electrical transport through the InSb bulk layer studied by Shubnikov-de Haas oscillations is shown to be independent of the crystallographic directions. The low-field electrical anisotropy of the InSb films appears to be governed by two competitive anisotropic effects: influence of spontaneously formed In nanoclusters inhomogeneously distributed within the InSb layers and conductivity through the near-interface layer with high anisotropic density of extended defects.