2018/04/30 by Hyun Ho Kim, Bowen Yang, Tarun Patel +6 · 2 citations
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Condensed matter physics #Ferromagnetism #Heterojunction #MXene and MAX Phase Materials #Magnetic field #Magnetic semiconductor #Magnetoresistance #Materials science #Optoelectronics #Perovskite Materials and Applications #Physics #Quantum mechanics #Semiconductor #Spins #Spintronics #Tunnel magnetoresistance #cond-mat.mtrl-sci #van der Waals force
paper · pdf · doi:10.1021/acs.nanolett.8b01552
published as Nano Lett. 18, 8, 4885-4890 (2018)
openalex publication_date 2018/07/12 · arxiv created 2018/07/18 · arxiv updated 2018/08/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI 3, as the active layer. At constant voltage bias, current increases by nearly one million percent upon application of a 2 T field. The effect arises from a change between antiparallel to parallel alignment of spins across the different CrI 3 layers. Our results elucidate the nature of the magnetic state in ultrathin CrI 3 and present new opportunities for spintronics based on two-dimensional materials.