2017/06/30 by Markus Meinert, Dominik Graulich, Tristan Matalla-Wagner · 3 citations
Materials Science · Physics and Astronomy · #Amplitude #Antiferromagnetism #Commutation #Current (fluid) #Current density #Magnetic properties of thin films #Multiferroics and related materials #Shape Memory Alloy Transformations #Spintronics #Switching time #Thermal #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevapplied.9.064040
published as Phys. Rev. Applied 9, 064040 (2018) · 8 pages, 6 figures
arxiv created 2018/04/03 · openalex created_date 2018/04/13 · openalex publication_date 2018/06/26 · arxiv updated 2018/07/04 · openalex updated_date 2026/08/05
Current-induced switching via N'eel spin-orbit torque in thin films of the antiferromagnet Mn2Au offers the prospect of a magnetic multilevel nonvolatile memory cell. The authors investigate this switching with experiments and modeling, explaining the strong dependence of the switching amplitude on current density and temperature. They also point out the importance of thermal assistance of the electrical current to the switching. The energy barrier to switching in Mn2Au is high enough to preserve a magnetic state for many years at room temperature, making this system suitable for real-world spintronic devices.