2017/12/10 by Shuai Zhang, Faji Xie, Xing-Chen Pan +8
Chemistry · Materials Science · Physics and Astronomy · #Chemistry #Condensed matter physics #Conductance #Electron #Electron transport chain #Field (mathematics) #Graphene research and applications #Magnetic field #Materials science #Physics #Quantum many-body systems #Quantum mechanics #Superconductivity #Symmetry (geometry) #Symmetry breaking #T-symmetry #Topological Materials and Phenomena #Topological insulator #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.5031013
published as Appl. Phys. Lett. 112, 243106 (2018)
arxiv created 2017/12/10 · openalex publication_date 2018/06/11 · arxiv updated 2018/06/26 · openalex created_date 2020/11/23 · openalex updated_date 2026/08/05
We extract the conductance fluctuations and study their magnetic field dependence in the gate-dependent transport of topological electrons in bulk-insulating BiSbTeSe2 devices. With the increasing magnetic field, the conductance fluctuation magnitudes are found to reduce by a ratio of 2 and form a quantized step. The step is observed both in n-type and p-type transport. This is related to the breaking of the time reversal symmetry of three-dimensional topological insulators.