Strain engineering of the silicon-vacancy center in diamond

2018/01/31 by Srujan Meesala, Young-Ik Sohn, Benjamin Pingault +16 · 1 citation
Physics and Astronomy · #quant-ph #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.97.205444

published as Phys. Rev. B 97, 205444 (2018) · 14 pages, 10 figures

arxiv created 2018/01/31 · arxiv updated 2018/06/06

Abstract

We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.

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