2018/01/04 by C. J. Dorow, J. R. Leonard, M. M. Fogler +3
Engineering · Materials Science · Physics and Astronomy · #Biexciton #Chemical and Physical Properties of Materials #Excitation #Exciton #Gallium arsenide #Molecular Junctions and Nanostructures #Point (geometry) #Power (physics) #Semiconductor Quantum Structures and Devices #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.5021488
published as Appl. Phys. Lett. 112, 183501 (2018)
arxiv created 2018/01/04 · openalex created_date 2018/01/12 · openalex publication_date 2018/04/30 · arxiv updated 2018/05/16 · openalex updated_date 2026/08/06
We present a concept and experimental proof of principle for split-gate devices for indirect excitons (IXs). The split-gate forms a narrow channel, a point contact, for IX current. Control of IX flow through the split-gate with both gate voltage and excitation power is demonstrated.