1968/12/01 by George R. Wilson · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Analog and Mixed-Signal Circuit Design #Semiconductor Quantum Structures and Devices #FET amplifier #Operational amplifier #Amplifier #Direct-coupled amplifier #Electrical engineering #Current-feedback operational amplifier #Operational transconductance amplifier #Transistor #Optoelectronics #Fully differential amplifier #Electronic circuit #Materials science #Fabrication #Electronic engineering #Engineering #Voltage #CMOS
paper · doi:10.1109/jssc.1968.1049922
openalex publication_date 1968/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2025/11/06
A monolithic operational amplifier with junction FET inputs in combination with n-p-n bipolar transistors is described. Both dc and small signal analysis of the amplifier are carried out. Electrically the devices are comparable with discrete state-of-the- art p-channel FET's. The circuits are fabricated with a process requiring a single diffusion more than standard techniques. The process is reproducible enough to allow economical fabrication. The amplifier realizes input currents of less than 1 nA, a minimum slewing rate at unity gain of 75 V//spl mu/s and bandwidths in excess of that of any monolithic operational amplifier reported to date.