2018/04/11 by И. Л. Дричко, I. L. Drichko, A. A. Dmitriev +11 · 2 citations
Chemistry · Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Band gap #Chemistry #Condensed matter physics #Conductivity #Doping #Electrical resistivity and conductivity #Magnetic field #Materials science #Optics #Perpendicular #Physics #Quantum and electron transport phenomena #Quantum well #Semiconductor Quantum Structures and Devices #Valence band #cond-mat.mes-hall #g factor
paper · pdf · doi:10.1063/1.5025413
4 pages, 5 figures
arxiv created 2018/04/11 · openalex publication_date 2018/04/24 · arxiv updated 2018/05/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The effective g-factor of 2D holes in modulation doped p-SiGe/Ge/SiGe structures was studied. The AC conductivity of samples with hole densities from 3.9 × 1011 to 6.2 × 1011 cm−2 was measured in perpendicular magnetic fields up to 8 T using a contactless acoustic method. From the analysis of the temperature dependence of conductivity oscillations, the g⊥-factor of each sample was determined. The g⊥-factor was found to be decreasing approximately linearly with hole density. This effect is attributed to the non-parabolicity of the valence band.