2017/10/31 by Alessandro Crippa, Romain Maurand, Léo Bourdet +11 · 2 citations
Physics and Astronomy · #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.120.137702
published as Phys. Rev. Lett. 120, 137702 (2018) · Letter format (4 pages, 4 figures). Detailed theory in Supplemenatl Material
arxiv created 2018/04/04 · arxiv updated 2018/04/05
In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-voltage dependence and anisotropy of the hole g-factors. We show that a g-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the g factors, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.