2017/10/29 by Suk In Park, Oliver J. Trojak, Oliver Joe Trojak +9
Materials Science · Physics and Astronomy · #Materials science #Nanometre #Nanotechnology #Optoelectronics #Photoluminescence #Photonics #Plasmon #Quantum Dots Synthesis And Properties #Quantum dot #Semiconductor Quantum Structures and Devices #Strong Light-Matter Interactions #Surface plasmon #Wavelength #cond-mat.mes-hall #cond-mat.mtrl-sci #physics.app-ph #physics.optics #quant-ph
paper · pdf · doi:10.1088/1361-6528/aab2e1
published as Nanotechnology 29, 205602 (2018) · 1 pages, 3 figures
arxiv created 2017/10/29 · openalex publication_date 2018/02/28 · arxiv updated 2018/03/26 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report on the growth and optical characterization of droplet GaAs quantum dots (QDs) with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the QDs obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single QDs, at visible wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are good candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.