2018/02/09 by D. Tumanov, Nitika Vaish, N. Vaish +12 · 16 citations
Engineering · Physics and Astronomy · #Condensed matter physics #Materials science #Optics #Optoelectronics #Photon #Photonic Crystals and Applications #Photonic and Optical Devices #Photonic crystal #Photonics #Physics #Quantum #Quantum dot #Quantum mechanics #Quantum wire #Resonance (particle physics) #Semiconductor #Semiconductor Quantum Structures and Devices #Strain (injury) #Stress (linguistics) #Superradiance #Transverse plane #Waveguide #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.5025313
published in Applied Physics Letters 112(12) (American Institute of Physics)
arxiv created 2018/02/09 · openalex publication_date 2018/03/19 · arxiv updated 2018/03/22 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06
We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection. Thanks to the geometry of the structure, we are able to shift the QD excitonic transition by more than 25 meV by using nano-manipulators to apply the stress. Moreover, owing to the strong transverse strain gradient generated in the structure, we can relatively tune two QDs located in the wire waveguide and bring them in resonance, opening the way to the observation of collective effects such as superradiance.