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Abelian Chern-Simons theory for the fractional quantum Hall effect in graphene

2017/12/10 by Christian Fräßdorf
Materials Science · Mathematics · Physics and Astronomy · #Abelian group #Chern–Simons theory #Condensed matter physics #Effective action #Electron #Fractional quantum Hall effect #Gauge theory #Graphene research and applications #Mathematical physics #Mathematics #Physics #Pure mathematics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum electrodynamics #Quantum mechanics #Quantum spin Hall effect #Surface and Thin Film Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.97.115123

published as Phys. Rev. B 97, 115123 (2018)

arxiv created 2017/12/10 · openalex publication_date 2018/03/12 · arxiv updated 2018/03/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We develop a theory for the pseudorelativistic fractional quantum Hall effect in graphene, which is based on a multicomponent Abelian Chern-Simons theory in the fermionic functional integral approach. Calculations are performed in the Keldysh formalism, directly giving access to real-time correlation functions at finite temperature. We obtain an exact effective action for the Chern-Simons gauge fields, which is expanded to second order in the gauge field fluctuations around the mean-field solution. The one-loop fermionic polarization tensor as well as the electromagnetic response tensor in random phase approximation are derived, from which we obtain the Hall conductivities for various FQH states, lying symmetrically around charge neutrality.

Citations