2018/01/09 by Jisoo Moon, Nikesh Koirala, Maryam Salehi +4 · 1 citation
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Condensed matter physics #Dirac (video compression format) #Doping #Electrical engineering #Electrical resistivity and conductivity #Electron #Graphene research and applications #Hall effect #Materials science #Nanotechnology #Optoelectronics #Physics #Quantum Hall effect #Quantum mechanics #Thin film #Topological Materials and Phenomena #Topological insulator #Topology (electrical circuits) #cond-mat.mtrl-sci
paper · pdf · doi:10.1021/acs.nanolett.7b04033
40 Pages, 8 Figures, 2 Tables, Accepted to Nano Letters
openalex publication_date 2018/01/09 · arxiv created 2018/01/16 · arxiv updated 2018/01/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Bi 2 Se 3, one of the most widely studied topological insulators (TIs), is naturally electron-doped due to n-type native defects. However, many years of efforts to achieve p-type Bi 2 Se 3 thin films have failed so far. Here, we provide a solution to this long-standing problem, showing that the main culprit has been the high density of interfacial defects. By suppressing these defects through an interfacial engineering scheme, we have successfully implemented p-type Bi 2 Se 3 thin films down to the thinnest topological regime. On this platform, we present the first tunable quantum Hall effect (QHE) study in Bi 2 Se 3 thin films and reveal not only significantly asymmetric QHE signatures across the Dirac point but also the presence of competing anomalous states near the zeroth Landau level. The availability of doping tunable Bi 2 Se 3 thin films will now make it possible to implement various topological quantum devices, previously inaccessible.