2017/08/22 by Yi-Yan Wang, Peng-Jie Guo, Qiao-He Yu +3
Materials Science · Physics and Astronomy · #Chemical and Physical Properties of Materials #Enhanced Data Rates for GSM Evolution #Fermi Gamma-ray Space Telescope #Gapless playback #Geometric phase #Magnetism #Magnetoresistance #Oscillation (cell signaling) #Rare-earth and actinide compounds #Topological Materials and Phenomena #Transverse plane #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1088/1367-2630/aa95e7
published as New J. Phys. 19, 123044 (2017) · 6 pages, 6 figures
arxiv created 2017/08/22 · openalex created_date 2017/08/31 · openalex publication_date 2017/10/25 · arxiv updated 2017/12/25 · openalex updated_date 2026/08/06
We report the magneto-transport properties and electronic structures of BaZnBi 2 . BaZnBi 2 is a quasi-two-dimensional material with metallic behavior. Transverse magnetoresistance (MR) depends on magnetic field linearly and exhibits Shubnikov–de Haas (SdH) oscillation at low temperature and high field. The observed linear MR may originate from the disorder in samples or the edge conductivity in compensated two-component systems. The first-principles calculations reveal the absence of stable gapless Dirac fermion. Combined with the trivial Berry phase extracted from the SdH oscillation, BaZnBi 2 is suggested as a topologically trivial semimetal. Nearly compensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist in BaZnBi 2 .