Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe

2017/12/13 by Andrey A. Kistanov, Yongqing Cai, Kun Zhou +3
Chemistry · Energy · Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Advanced Photocatalysis Techniques #Atomic units #Chalcogenide Semiconductor Thin Films #Chemical physics #Chemistry #Crystallography #Degradation (telecommunications) #Dissociation (chemistry) #Graphene #Heterojunction #Hexagonal boron nitride #Indium #Layer (electronics) #Materials science #Nanotechnology #Optoelectronics #Oxide #Passivation #Photochemistry #Physical chemistry #Selenide #Vacancy defect #cond-mat.mtrl-sci

paper · pdf · doi:10.1039/c7tc04738j

arxiv created 2017/12/13 · openalex publication_date 2017/12/14 · arxiv updated 2017/12/19 · openalex created_date 2017/12/22 · openalex updated_date 2026/08/05

Abstract

Perfect InSe possesses high chemical stability against oxidation. However, the presence of intrinsic Se vacancy and light illumination can markedly accelerate its oxidation.

Citations

• Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set
• Air Passivation of Chalcogen Vacancies in Two‐Dimensional Semiconductors
• Photoluminescence and Raman investigation of stability of InSe and GaSe thin films
• The role of H 2 O and O 2 molecules and phosphorus vacancies in the structure instability of phosphorene