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Integer quantum Hall effect and topological phase transitions in silicene

2017/12/01 by Y. L. Liu, Liu, Luo +7 · 4 citations
Materials Science · Physics and Astronomy · #Condensed matter physics #Electric field #Graphene #Graphene research and applications #Magnetic field #Phase transition #Physics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum phase transition #Quantum spin Hall effect #Silicene #Topological Materials and Phenomena #Topological insulator #cond-mat.str-el

paper · pdf · doi:10.5488/cmp.20.43701

published in Condensed Matter Physics 20(4), 43701 (Institute for Condensed Matter Physics of NAS of Ukraine) · 7 pages, 4 figures

openalex publication_date 2017/12/01 · arxiv created 2017/12/14 · arxiv updated 2017/12/15 · openalex created_date 2017/12/22 · openalex updated_date 2026/08/05

Abstract

We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at = 0, 2, 6, . . . , and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band center, in which higher plateaus disappear first. However, the center = 0

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