InGaAs and GaAs quantum dot solar cells grown by droplet epitaxy

2016/12/19 by Peng Yu, Jiang Wu, Lei Gao +2 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Absorption (acoustics) #Epitaxy #Gallium arsenide #Layer (electronics) #Materials science #Molecular beam epitaxy #Nanotechnology #Optoelectronics #Photovoltaic system #Polymer solar cell #Quantum Dots Synthesis And Properties #Quantum dot #Quantum dot solar cell #Semiconductor Quantum Structures and Devices #Solar cell #solar cell performance optimization

paper · doi:10.1016/j.solmat.2016.12.024

openalex publication_date 2016/12/19 · crossref created 2016/12/19 · crossref issued 2017/03/01 · crossref published 2017/03/01 · crossref published-print 2017/03/01 · crossref deposited 2020/09/28 · openalex created_date 2025/10/10 · crossref indexed 2026/02/08 · openalex updated_date 2026/07/23

Citations

• Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
• Peak External Photocurrent Quantum Efficiency Exceeding 100% via MEG in a Quantum Dot Solar Cell
• Broadband efficiency enhancement in quantum dot solar cells coupled with multispiked plasmonic nanostars
• Exploring atomic defects in molybdenum disulphide monolayers

Cited by

• Solar cell [wikipedia]