2022/10/21 by Daniel Sandner, Hamidreza Esmaielpour, Sandner, Daniel +11
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Nanowire Synthesis and Applications #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2210.11886
openalex publication_date 2022/10/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Semiconductor nanowires (NWs) have shown evidence of robust hot carrier effects due to their small dimensions. The relaxation dynamics of hot carriers in these nanostructures, generated by photo-absorption, are of great importance in optoelectronic devices and high efficiency solar cells, such as hot carrier solar cells. Among various III-V semiconductors, indium arsenide (InAs) NWs are promising candidates for their applications in advanced light harvesting devices due to their high photo-absorptivity and high mobility. Here, we investigate the hot carrier dynamics in InAs-AlAsSb core-shell NWs, as well as bare-core InAs NWs, using ultrafast pump-probe spectroscopy with widely tuned pump and probe energies. We have found a lifetime of 2.3 ps for longitudinal optical (LO) phonons and hot electron lifetimes of about 3 ps and 30 ps for carrier-carrier interactions and electron-phonon interactions, respectively. In addition, we have investigated the electronic states in the AlAsSb-shell and found that, despite the large band offset of the core-shell design in the conduction band, excited carriers remain in the shell longer than 100 ps. Our results indicate evidence of plasmon-tailored core-shell NWs for efficient light harvesting devices, which could open potential avenues for improving the efficiency of photovoltaic solar cells.