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Electron transport in nodal-line semimetals

2016/12/23 by Sergey Syzranov, S. V. Syzranov, B. Skinner +1
Materials Science · Mathematics · Physics and Astronomy · #Anisotropy #Band gap #Condensed matter physics #Conductivity #Coulomb #Doping #Electrical resistivity and conductivity #Electron #Geometry #Graphene research and applications #Impurity #Line (geometry) #Mathematics #Physics #Quantum mechanics #Semiconductor #Semimetal #Sigma #Thermal conduction #Thermal properties of materials #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.96.161105

published as Phys. Rev. B 96, 161105 (2017) · 5+1 pages, 2 figures

arxiv created 2016/12/23 · openalex publication_date 2017/10/11 · arxiv updated 2017/10/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We study the electrical conductivity in a nodal-line semimetal with charged impurities. The screening of the Coulomb potential in this system is qualitatively different from what is found in conventional metals or semiconductors, with the screened potential \ensuremathφ decaying as \ensuremathφ\ensuremath∝1/r2 over a wide interval of distances r. This unusual screening gives rise to a rich variety of conduction regimes as a function of temperature, doping level, and impurity concentration. In particular, nodal-line semimetals exhibit a diverging mobility \ensuremath∝1/|\ensuremathμ| in the limit of vanishing chemical potential \ensuremathμ, a linearly increasing dependence of the conductivity on temperature, \ensuremathσ\ensuremath∝T, and a large weak-localization correction with a strongly anisotropic dependence on magnetic field.

Citations