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Persistent Dirac Fermion State on Bulk-like Si(111) Surface

2014/05/29 by Jian Chen, Wenbin Li, Chen, Jian +11
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Noncommutative and Quantum Gravity Theories #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1405.7534

3 figures

arxiv created 2014/05/29 · openalex publication_date 2014/05/29 · arxiv updated 2014/05/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The "multilayer silicene" films were grown on Ag(111), with increasing thickness above 30 monolayers (ML). We found that the "multilayer silicene" is indeed a bulk Si(111) film. Such Si film on Ag(111) always exhibits a root(3)xroot(3) honeycomb superstructure on surface. Delocalized surface state as well as linear energy-momentum dispersion was revealed by quasiparticle interference patterns (QPI) on the surface, which proves the existence of Dirac fermions state. Our results indicate that bulk silicon with diamond structure can also host Dirac fermions, which makes the system even more attractive for further applications compared with monolayer silicene.

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