2016/02/29 by G. Eigen, Eigen, Gerald, Are Sivertsen Træet +9
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #High Energy Physics - Experiment (hep-ex) #Instrumentation and Detectors (physics.ins-det) #Particle Detector Development and Performance #Superconducting and THz Device Technology
paper · pdf · doi:10.48550/arxiv.1603.00016
openalex publication_date 2016/02/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present herein gain stabilization studies of SiPMs using a climate chamber at CERN. We present results for four detectors not tested before, three from Hamamatsu and one from KETEK. Two of the Hamamatsu SiPMs are novel sensors with trenches that reduce cross talk. We use an improved readout system with a digital oscilloscope controlled with a dedicated LabView program. We improved and automized the analysis to deal with large datasets. We have measured the gain-versus-bias-voltage dependence at fixed temperature and gain-versus-temperature dependence at fixed bias voltage to determine the bias voltage dependence on temperature V(T) for stable gain. We show that the gain remains stable to better than ± 0.5% in the 20^∘ \rm C - 30^∘ C temperature range if the bias voltage is properly adjusted with temperature.