A Multi-domain Magneto Tunnel Junction for Racetrack Nanowire Strips

2022/05/25 by Dutta, Prayash, Lee, Albert, Wang, Kang L. +2
#Emerging Technologies (cs.ET) #FOS: Computer and information sciences

paper · doi:10.48550/arxiv.2205.12494

Abstract

Domain-wall memory (DWM) has SRAM class access performance, low energy, high endurance, high density, and CMOS compatibility. Recently, shift reliability and processing-using-memory (PuM) proposals developed a need to count the number of parallel or anti-parallel domains in a portion of the DWM nanowire. In this paper we propose a multi-domain magneto-tunnel junction (MTJ) that can detect different resistance levels as a function of a the number of parallel or anti-parallel domains. Using detailed micromagnetic simulation with LLG, we demonstrate the multi-domain MTJ, study the benefit of its macro-size on resilience to process variation and present a macro-model for scaling the size of the multi-domain MTJ. Our results indicate scalability to seven-domains while maintaining a 16.3mV sense margin.

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