Giant Magnetoresistance in Organic Spin Valves

2010/06/11 by Dali Sun, Lifeng Yin, Chengjun Sun +6 · 2 citations
Engineering · Materials Science · Chemistry · #Organic Light-Emitting Diodes Research #Conducting polymers and applications #Advanced Memory and Neural Computing #Giant magnetoresistance #Spintronics #Materials science #Magnetoresistance #Condensed matter physics #Nanodot #Spin valve #Spin (aerodynamics) #Layer (electronics) #Diffusion #Organic semiconductor #Spin diffusion #Electrode #Chemical physics #Nanotechnology #Optoelectronics #Ferromagnetism #Magnetic field #Chemistry #Thermodynamics #Physics #Physical chemistry

paper · pdf · doi:10.1103/physrevlett.104.236602

openalex publication_date 2010/06/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/22

Abstract

Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to ∼300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.

Citations

• Theory of space-charge-limited current enhanced by Frenkel effect

Cited by

• Active control of magnetoresistance of organic spin valves using ferroelectricity
• Giant magnetoresistance [wikipedia]

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