2016/10/20 by Karthik Krishnaswamy, Burak Himmetoglu, Burak Himmetoḡlu +3 · 95 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Boltzmann equation #Chemistry #Condensed matter physics #Crystallography #Diamond and Carbon-based Materials Research #Dopant #Doping #Electrical resistivity and conductivity #Electron mobility #Electronic and Structural Properties of Oxides #Hall effect #Impurity #Ionized impurity scattering #Materials science #Perovskite (structure) #Phonon #Phonon scattering #Physics #Quantum mechanics #Relaxation (psychology) #Scattering #Semiconductor materials and devices #Thermodynamics #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.95.205202
published in Physical review. B./Physical review. B 95(20) (American Physical Society) · 13 pages, 9 figures
arxiv created 2016/10/20 · openalex created_date 2016/11/04 · openalex publication_date 2017/05/15 · arxiv updated 2017/05/24 · openalex updated_date 2026/08/05
Transparent conducting oxides are used in a wide variety of applications, including solar cells and displays. Recently, the perovskite oxide BaSnO3 was demonstrated to be a superior material, with a carrier mobility that is 30 times larger than that of the prototypical perovskite oxide, SrTiO3. This outstanding value has opened up prospects for applications in advanced electronic devices. Using accurate first-principles calculations and Boltzmann transport theory, the authors perform a careful and detailed numerical analysis of the LO phonon and ionized impurity scattering mechanisms to elucidate their impact on mobility. They also compute the Hall factor explicitly, enabling a direct comparison to experimental reports of Hall mobilities for bulk and thin films. The analysis provides insights into the nature of the dominant mechanisms that limit mobility in state-of-the-art samples, and will aid the design of perovskite oxides with targeted transport properties.