2017/03/27 by Panpan Zhou, Will J. Hardy, Will Hardy +3
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Computer science #Condensed matter physics #Detector #Graphene research and applications #Hexagonal boron nitride #Materials science #Nanotechnology #Noise (video) #Ohmic contact #Optics #Optoelectronics #Physics #Quantum tunnelling #Semiconductor materials and devices #Shot noise #Tunnel effect #Tunnel junction #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.4978693
published as Appl. Phys. Lett., 110, 133106 (2017) · 20 pages, 4 figures
openalex publication_date 2017/03/27 · arxiv created 2017/04/17 · arxiv updated 2017/04/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
High quality Au/hBN/Au tunnel devices are fabricated using transferred atomically thin hexagonal boron nitride as the tunneling barrier. All tunnel junctions show tunneling resistance on the order of several kΩ/μm2. Ohmic I-V curves at small bias with no signs of resonances indicate the sparsity of defects. Tunneling current shot noise is measured in these devices, and the excess shot noise shows consistency with theoretical expectations. These results show that atomically thin hBN is an excellent tunnel barrier, especially for the study of shot noise properties, and this can enable the study of the tunneling density of states and shot noise spectroscopy in more complex systems.