2001/12/10 by T. M. Gassym, Gassym, T. M., H. A. Hasanov +1
Engineering · Physics and Astronomy · #Advanced Thermodynamics and Statistical Mechanics #Condensed Matter (cond-mat) #FOS: Physical sciences #Optical properties and cooling technologies in crystalline materials #Thermal Radiation and Cooling Technologies #cond-mat
paper · pdf · doi:10.48550/arxiv.cond-mat/0112162
18 pages LaTex formatted
arxiv created 2001/12/10 · openalex publication_date 2001/12/10 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The transverse Nernst--Ettingshausen effect and thermopower of hot charge carriers in nondegenerate impure semiconductors placed at high electric and nonquantized magnetic fields in the nondiffusion approximation is studied. Arbitrary heating and mutual drag of electrons and long wavelength phonons interacting with electrons are considered. The spectrum of electrons is assumed to be strong nonparabolic in Kane two--band approximation. The case when the electron concentration is high and frequent interelectronic collisions lead to the equilibrium symmetric part of the electron distribution function with effective electron temperature is considered.