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Interlayer coupling in commensurate and incommensurate bilayer structures of transition-metal dichalcogenides

2016/10/31 by Yong Wang, Zhan Wang, Wang Yao +3 · 5 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Bilayer #Chemistry #Condensed matter physics #Coupling (piping) #Luminescence and Fluorescent Materials #Materials science #Membrane #Metallurgy #Perovskite Materials and Applications #Physics #Transition metal #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.95.115429

published as Phys. Rev. B 95, 115429 (2017) · 12 pages, 8 figures

openalex created_date 2016/10/14 · arxiv created 2017/02/20 · openalex publication_date 2017/03/24 · arxiv updated 2017/03/28 · openalex updated_date 2026/08/06

Abstract

The interlayer couplings in commensurate and incommensurate bilayer structures of transition-metal dichalcogenides are investigated with perturbative treatment. The interlayer coupling in \ifmmode±\else\textpm\fiK valleys can be decomposed into a series of hopping terms with distinct phase factors. In H-type and R-type commensurate bilayers, the interference between the three main hopping terms leads to a sensitive dependence of the interlayer coupling strength on the translation that can explain the position dependent local band gap modulation in a heterobilayer moir'e superlattice. The interlayer couplings in the \mathbf\ensuremathΓ valley of valence band and Q valley of conduction band are also studied, where the strong coupling strengths of several hundred meV can play important roles in mediating the ultrafast interlayer charge transfer in heterobilayers of transition-metal dichalcogenides.

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