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Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES

2016/09/08 by Eryin Wang, Guorui Chen, Guoliang Wan +12
Materials Science · Physics and Astronomy · #2D Materials and Applications #Angle-resolved photoemission spectroscopy #Brillouin zone #Condensed matter physics #Electronic structure #Graphene #Graphene research and applications #Heterojunction #Materials science #Nanotechnology #Nuclear magnetic resonance #Physics #Quantum mechanics #Stacking #Superlattice #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci #van der Waals force

paper · pdf · doi:10.1088/0953-8984/28/44/444002

published as J. Phys.: Condens. Matter 28 (2016) 444002

openalex publication_date 2016/09/08 · arxiv created 2017/01/31 · arxiv updated 2017/02/01 · openalex created_date 2020/11/23 · openalex updated_date 2026/08/05

Abstract

In van der Waals heterostructures, the periodic potential from the Moiré superlattice can be used as a control knob to modulate the electronic structure of the constituent materials. Here we present a nanoscale angle-resolved photoemission spectroscopy (nano-ARPES) study of transferred graphene/h-BN heterostructures with two different stacking angles of 2.4° and 4.3° respectively. Our measurements reveal six replicas of graphene Dirac cones at the superlattice Brillouin zone (SBZ) centers. The size of the SBZ and its relative rotation angle to the graphene BZ are in good agreement with Moiré superlattice period extracted from atomic force microscopy (AFM) measurements. Comparison to the epitaxial graphene/h-BN with 0° stacking angles suggests that the interaction between graphene and h-BN decreases with increasing stacking angle.

Citations