2015/08/27 by Faris Kadi, Torben Winzer, Andreas Knorr +1 · 2 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Carrier lifetime #Doping #Dynamics (music) #Graphene #Graphene research and applications #Molecular dynamics #Multiple exciton generation #Multiplication (music) #Thermal properties of materials #Ultrashort pulse #cond-mat.mes-hall
paper · pdf · doi:10.1038/srep16841
published as Sci. Rep. 5, 16841 (2015)
arxiv created 2015/08/27 · openalex publication_date 2015/11/18 · openalex created_date 2016/06/24 · arxiv updated 2017/01/17 · openalex updated_date 2026/08/05
We present a microscopic study on the impact of doping on the carrier dynamics in graphene, in particular focusing on its influence on the technologically relevant carrier multiplication in realistic, doped graphene samples. Treating the time- and momentum-resolved carrier-light, carrier-carrier, and carrier-phonon interactions on the same microscopic footing, the appearance of Auger-induced carrier multiplication up to a Fermi level of 300 meV is revealed. Furthermore, we show that doping favors the so-called hot carrier multiplication occurring within one band. Our results are directly compared to recent time-resolved ARPES measurements and exhibit an excellent agreement on the temporal evolution of the hot carrier multiplication for n- and p-doped graphene. The gained insights shed light on the ultrafast carrier dynamics in realistic, doped graphene samples.