2016/07/03 by E. Piatti, Erik Piatti, S. Galasso +12
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Asymmetry #Capacitance #Carrier scattering #Charge carrier #Charge density #Chemical physics #Chemistry #Computational chemistry #Condensed matter physics #Density functional theory #Doping #Electric field #Electrode #Electrolyte #Electron mobility #Field-effect transistor #Graphene #Graphene research and applications #Induced high electron mobility transistor #Layer (electronics) #Materials science #Nanotechnology #Optics #Optoelectronics #Physical chemistry #Physics #Quantum and electron transport phenomena #Scattering #Semiconductor materials and devices #Transistor #Voltage #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1016/j.apsusc.2016.06.192
published as E. Piatti et al., Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene, Appl. Surf. Sci. 395, 37 (2017) · 6 pages, 3 figures
openalex publication_date 2016/07/03 · arxiv created 2017/01/10 · arxiv updated 2017/01/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and five-layer samples under a large induced surface charge density both above and below the glass transition temperature of the polymer. We find that the carrier mobility shows a strong asymmetry between the hole and electron doping regime. We then employ ab-initio density functional theory (DFT) calculations to determine the average scattering lifetime from the experimental data. We explain its peculiar dependence on the carrier density in terms of the specific properties of the electrolyte we used in our experiments.