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Persistent Spin Textures in Semiconductor Nanostructures

2016/04/30 by John Schliemann · 1 citation
Physics and Astronomy · #cond-mat.mes-hall #quant-ph

paper · pdf · doi:10.1103/revmodphys.89.011001

published as Rev. Mod. Phys. 89, 011001 (2017) · Version to appear in Reviews of Modern Physics (Colloquia section)

arxiv created 2016/09/08 · arxiv updated 2017/01/10

Abstract

Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by schemes of quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling electron spins in semiconductors are generically subject to rather fast decoherence. In two-dimensional quantum wells made of zinc-blende semiconductors, however, the spin-orbit interaction can be engineered in such a way that persistent spin structures with extraordinarily long spin lifetimes arise even in the presence of disorder and imperfections. We review experimental and theoretical developments on this subject both for n-doped and p-doped structures, and we discuss possible device applications.

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