Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

1989/11/01 by Isamu Akasaki, Hiroshi Amano, Yasuo Koide +2 · 1 citation
Physics and Astronomy · Materials Science · #GaN-based semiconductor devices and materials #ZnO doping and properties #Ga2O3 and related materials

paper · doi:10.1016/0022-0248(89)90200-5

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