1977/01/01 by A. Dingwall, R. Stricker, J. Sinniger · 1 citation
Engineering · Computer Science · #Advancements in Semiconductor Devices and Circuit Design #Semiconductor materials and devices #VLSI and Analog Circuit Testing #CMOS #Microprocessor #Silicon #Logic gate #Integrated injection logic #Simplicity #Silicon on sapphire #Electronic engineering #Pass transistor logic #Computer science #Electrical engineering #Optoelectronics #Materials science #Engineering #Electronic circuit #Physics #Silicon on insulator #Digital electronics
paper · doi:10.1109/isscc.1977.1155726
openalex publication_date 1977/01/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29
THIS PAPER will discuss a structural form of self-aligned silicon-gate technology - C2L - a Closed COS/MOS Logic approach to extend the capability of CMOS design by affording improvement in speed, packing density, yields, and process simplicity. The technique has been found to approach circuit speeds on low-cost bulk silicon previously only possible with SOS (Silicon-on-Sapphire) technology. C2L approach can be considered a CMOS counterpart to bipolar 12L in that it is also based on a common-source approach to logic.