1959/04/01 by W. G. Spitzer, J. M. Whelan · 2 citations
Engineering · Physics and Astronomy · Chemistry · #Chalcogenide Semiconductor Thin Films #Semiconductor materials and interfaces #Semiconductor Quantum Structures and Devices #Gallium arsenide #Effective mass (spring–mass system) #Absorption (acoustics) #Electron #Infrared #Analytical Chemistry (journal) #Gallium #Physics #Materials science #Atomic physics #Condensed matter physics #Optics #Chemistry #Nuclear physics #Quantum mechanics
paper · doi:10.1103/physrev.114.59
openalex publication_date 1959/04/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/11
The infrared absorption between 0.85 and 25 microns has been measured as a function of carrier concentration for n-type single-crystal gallium arsenide. The absorption in the 1- to 5-micron region is compatible with a model in which there are minima \ensuremath∼0.25 ev above the bottom of the conduction band. Infrared reflectivity measurements on several samples of different carrier concentrations were used to deduce the free-carrier contribution to the electric susceptibility and the electron effective mass. The results indicate a value for the mass of (0.078\ifmmode±\else\textpm\fi0.004)m with an indication of an increase for the sample of highest carrier concentration. This value is substantially larger than previously reported values.