2019/10/11 by Sergii Vasiukov, F. Chiossi, C. Braggio +4 · 3 citations
Physics and Astronomy · Chemistry · #Dark Matter and Cosmic Phenomena #Radiation Detection and Scintillator Technologies #Atomic and Subatomic Physics Research #Luminescence #Scintillator #Physics #Gallium arsenide #Scintillation #Optoelectronics #Materials science #Photodetector #Analytical Chemistry (journal) #Optics #Chemistry
paper · doi:10.1109/tns.2019.2946725
openalex publication_date 2019/10/11 · openalex created_date 2019/10/18 · openalex updated_date 2026/08/01
This article presents the measurements of the luminescence and scintillation under X-ray of undoped, Si-doped, and Si, B codoped gallium-arsenide (GaAs) samples at cryogenic temperature over a wide infrared (IR) region using Si and InGaAs photodetectors. The undoped GaAs has a narrow emission band at 838 nm (1.48 eV) and a low light output of about 2 ph/keV. The GaAs:Si has three broad luminescence bands at 830 nm (1.49 eV), 1070 nm (1.16 eV), and 1335 nm (0.93 eV) and a light output of about 67 ph/keV. GaAs:(Si, B) has four luminescence bands at 860 nm (1.44 eV), 930 nm (1.33 eV), 1070 nm (1.16 eV), and 1335 nm (0.93 eV) with a light yield of approximately 119 ph/keV. With advances in photodetection, GaAs promises to be a useful cryogenic scintillator for the detection of electron recoils from MeV/c2dark matter.