1967/01/01 by J.L. Langdon, Ernest J. Derveer · 1 citation
Engineering · #Radio Frequency Integrated Circuit Design #Semiconductor Lasers and Optical Devices #Analog and Mixed-Signal Circuit Design #Design for manufacturability #Transistor #Capacitance #Common emitter #Electrical engineering #Bipolar junction transistor #Electronic engineering #Cutoff frequency #Electronic circuit #Voltage #Engineering #Computer science #Physics #Electrode
paper · doi:10.1147/rd.111.0069
openalex publication_date 1967/01/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/11
The evolution of a high-speed current switch transistor design is described from initial design considerations through final optimization of horizontal geometry. It was found that a very narrow geometry was desirable, in order to produce the desired low base resistance (∼40 Ω). Other characteristics of this design include low capacitance, well-controlled emitter forward voltage, and high-frequency cutoff. Compatibility with the SLT form factor assures manufacturability. This transistor when used in ASLT circuits yields circuit delays of 1.8 nsec.