2019/02/28 by Matthias C. Löbl, Liang Zhai, Jan-Philipp Jahn +8 · 2 citations
Materials Science · Physics and Astronomy · #Condensed matter physics #Diamagnetism #Lattice (music) #Materials science #Molecular physics #Nanotechnology #Nucleation #Optics #Optoelectronics #Photon #Physics #Quantum Dots Synthesis And Properties #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Semiconductor #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.100.155402
published as Phys. Rev. B 100, 155402 (2019)
openalex created_date 2019/06/27 · arxiv created 2019/10/03 · openalex publication_date 2019/10/03 · arxiv updated 2019/10/04 · openalex updated_date 2026/08/05
A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over μm-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved.