Probing the Bonding and Electronic Structure of Single Atom Dopants in Graphene with Electron Energy Loss Spectroscopy

2012/12/21 by Quentin M. Ramasse, Ché R. Seabourne, Despoina-Maria Kepaptsoglou +3 · 5 citations
Materials Science · Engineering · Chemistry · #Graphene research and applications #Semiconductor materials and devices #Molecular Junctions and Nanostructures #Graphene #Electron energy loss spectroscopy #Spectroscopy #Electronic structure #Materials science #Molecular physics #Dopant #Ab initio quantum chemistry methods #Atom (system on chip) #Scanning transmission electron microscopy #Ab initio #Atomic physics #Electron #Transmission electron microscopy #Impurity #Electron spectroscopy #Chemistry #Nanotechnology #Optoelectronics #Doping #Computational chemistry #Physics #Molecule

paper · doi:10.1021/nl304187e

openalex publication_date 2012/12/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/17

Abstract

A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal striking electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exceptional signal-to-noise levels in the spectroscopic data. The near-edge fine structure can be compared with great accuracy to simulations and reveal either an sp(3)-like configuration for a trivalent Si or a more complicated hybridized structure for a tetravalent Si impurity.

Citations

• Conditioning of quasi-Newton methods for function minimization
• A family of variable-metric methods derived by variational means
• A new approach to variable metric algorithms

Cited by

• Direct visualization of the 3D structure of silicon impurities in graphene
• Manipulating low-dimensional materials down to the level of single atoms with electron irradiation
• Elastic Scattering of Electron Vortex Beams in Magnetic Matter
• Fabrication and characterization of boron-terminated tetravacancies in monolayer hBN using STEM, EELS and electron ptychography
• Electron energy loss spectroscopy [wikipedia]

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