2026/04/17 by Cheol-Yeon Cheon, Kenji Watanabe, Takashi Taniguchi +2
Materials Science · Physics and Astronomy · #2D Materials and Applications #Anisotropy #Antiferromagnetism #Electronic and Structural Properties of Oxides #Field-effect transistor #Magnetoresistance #Semiconductor #Spintronics #Topological Materials and Phenomena #Transistor #cond-mat.mes-hall #cond-mat.mtrl-sci #van der Waals force
paper · pdf · doi:10.1021/acs.nanolett.6c01905
published as Nano Letters 2026
arxiv created 2026/04/17 · openalex publication_date 2026/07/22 · openalex created_date 2026/07/23 · openalex updated_date 2026/07/23 · arxiv updated 2026/08/05
Anisotropic magnetoresistance (AMR) offers a robust electrical readout of antiferromagnetic (AFM) states, playing a central role in the rapidly advancing field of AFM spintronics. Despite its great versatility, electrical probing of the Néel vector via AMR remains challenging in the ultrathin limit due to interface disorder and reduced dimensionality. Here, we demonstrate electrical readout of the Néel vector down to 1.3 nm (two layers) in the two-dimensional van der Waals (vdW) AFM semiconductor NiPS 3 . Leveraging spin-flop-mediated rotation of the Néel vector and using both transistor and tunnel-junction device geometries, we identify two distinct AMR contributions in NiPS 3, which dominate at low and high charge densities, respectively. We achieve full gate control over these contributions, enabling tunability of both the magnitude and sign of magnetoresistance. Our results establish semiconducting vdW antiferromagnets as a rich platform for studying AMR in the ultrathin limit, opening new avenues for multifunctional AFM spintronic devices.