2006/09/22 by Petukhov, A. G., Smelyanskiy, V. N., Osipov, V. V.
#FOS: Physical sciences #Other Condensed Matter (cond-mat.other)
paper · doi:10.48550/arxiv.cond-mat/0609599
We show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor FM-n+-n junctions even at moderate spin selectivity of the FM-n+ contact when the electrons are extracted from the heavily doped n+-semiconductor into the ferromagnet. We derived a general equation relating spin polarization of the current to that of the electron density in nonmagnetic semiconductors. We found that the effect of the complete spin polarization is achieved near n+-n interface when an effective diffusion coefficient goes to zero in this region while the diffusion current remains finite.