2015/09/03 by Santosh Kumar, Artur Kaczmarczyk, Brian D. Gerardot · 1 citation
Physics and Astronomy · #cond-mat.mes-hall
paper · pdf · doi:10.1021/acs.nanolett.5b03312
6 pages, 4 figures
arxiv created 2015/09/03 · arxiv updated 2016/10/11
Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique opto-electronic properties. Here we report that strain gradients induced by substrate patterning result in spatially and spectrally isolated quantum emitters in mono- and bi-layer WSe2. By correlating localized excitons with localized strain-variations, we show that the quantum emitter emission energy can be red-tuned up to a remarkable ~170 meV. We probe the fine-structure, magneto-optics, and second order coherence of a strained emitter. These results raise the prospect to strain-engineer quantum emitter properties and deterministically create arrays of quantum emitters in two-dimensional semiconductors.