Photoinduced Chern insulating states in semi-Dirac materials

2016/06/30 by Kush Saha · 1 citation
Chemistry · Materials Science · Mathematics · Physics and Astronomy · #Chemistry #Chern class #Condensed matter physics #Dirac (video compression format) #Dispersion (optics) #Gapless playback #Geometry #Graphene research and applications #Mathematics #Phase transition #Physics #Polarization (electrochemistry) #Quantum Mechanics and Non-Hermitian Physics #Quantum mechanics #Topological Materials and Phenomena #Topological order #Topology (electrical circuits) #cond-mat.mtrl-sci #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.94.081103

published as Phys. Rev. B 94, 081103(R) (2016) · 5 pages, 4 figures

openalex publication_date 2016/08/08 · arxiv created 2016/08/31 · arxiv updated 2016/09/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Two-dimensional (2D) semi-Dirac materials are characterized by a quadratic dispersion in one direction and a linear dispersion along the orthogonal direction. We study the topological phase transition in such 2D systems in the presence of an electromagnetic field. We show that a Chern insulating state emerges in a semi-Dirac system with two gapless Dirac nodes in the presence of light. In particular, we show that the intensity of a circularly polarized light can be used as a knob to generate topological states with nonzero Chern number. In addition, for fixed intensity and frequency of the light, a semi-Dirac system with two gapped Dirac nodes with trivial band topology can reveal the topological transition as a function of polarization of the light.

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• Photoinduced dc Hall current in few-layer black phosphorus with a gate-tunable Floquet gap